Preparation method of silicon-based MEMS blazed grating

The invention relates to a preparation method of a silicon-based MEMS blazed grating, and belongs to the technical field of semiconductor processing. Based on an anisotropic wet etching characteristicof single crystal silicon, an N type (111) silicon wafer is cut according to a specific cutting angle (namely blazed angle), a twice photoetching corrosion method is adopted, and the slow etched surfaces (111) of silicon are intersected to form the glazed grating. The silicon-based MEMS glazed grating is prepared by using the method, the top platform of the grating can be reduced effectively, theshape of the blazed grating is improved, the diffraction efficiency of the grating is improved, and the preparation of the blazed grating with any blazed angle is realized; and moreover, the silicon-based MEMS blazed grating also has the advantages of high precision, easy integration, low cost, high repeatability, applicability for bath production and the like, and the prepared silicon-based MEMSglazed grating can be wide