Light-emitting diode and fabrication method thereof

The invention relates to a light-emitting diode and a fabrication method thereof. In the light-emitting diode fabricated by the method of the light-emitting diode, an N-type layer comprises an aluminum nitride indium layer, a silicon nitride layer and a second N-type gallium nitride layer which are arranged in a lamination way. Since the silicon nitride layer is of a net-shaped structure, a secondN-type gallium nitride layer laminated on the silicon nitride layer can grow along a lamination direction of the light-emitting diode by the net-shaped structure, so that three-dimensional growth ofthe second N-type gallium nitride layer is achieved. Lattice of the aluminum nitride indium layer is similar to lattice of the first N-type gallium nitride layer and the second N-type gallium nitridelayer, the electron conduction capability of the N-type layer can be improved by matching of the aluminum nitride indium layer, the silicon nitride layer and the second N-type gallium nitride layer, and the light-emitting effec