Top-gate self-aligned metal oxide semiconductor TFT, fabrication method thereof and display panel

The invention discloses a top-gate self-aligned metal oxide semiconductor TFT, a fabrication method thereof and a display panel. In the top-gate self-aligned metal oxide semiconductor TFT, an ultrathin metal layer is additionally arranged, so that harm of plasma to indium gallium zinc oxide during chemical vapor phase deposition of a gate is prevented, and meanwhile, the mobility and the reliability of the device are improved. 本发明披露一种顶栅自对准金属氧化物半导体TFT及其制作方法和显示面板，所述顶栅自对准金属氧化物半导体TFT通过新增一超薄金属层，以防止在栅极的化学气相沉积时等离子体对氧化铟镓锌造成的伤害，同时提升器件的迁移率和可靠度。