Preparation method of Ge-doped Bi2Te3 thermoelectric film

The invention discloses a preparation method of a Ge-doped Bi2Te3 thermoelectric film. The preparation method comprises the following steps of 1, cleaning a silicon glass substrate, performing ultrasonic treatment on the silicon glass substrate in acetone and drying the silicon glass substrate; 2, putting the silicon glass substrate into a cabin for drying; 3, putting the silicon glass substrate into a magnetron sputtering substrate table for sputtering; and 4, performing secondary sputtering, adopting on-line heating and performing vacuum heat preservation to remove stress. The preparation method has the advantages that the on-line heating mode is adopted, the magnetron sputtering technology is adopted, the Ge content ratio is changed, and the performance of the Bi2Te3 thin film is improved. Cooling protection and de-stressing under the vacuum condition are performed so as to facilitate bonding between the film and the substrate. Operation is simple. 本发明公开了一种Ge掺BiTe热电薄膜制备方法，包括以下步骤：步骤1，将硅玻璃基片进行清洗，在丙酮中进行超声并进行干