Light emitting diode and forming method thereof

The invention relates to a light emitting diode and a forming method thereof. The forming method of the light-emitting diode comprises the steps that providing a substrate, wherein the substrate is provided with a first surface and a second surface which are oppositely arranged; preparing an N-type semiconductor layer, wherein the N-type semiconductor layer covers the first surface; preparing a multi-quantum well structure layer, wherein the multi-quantum well structure layer covers the N-type semiconductor layer; preparing an energy band distortion structure layer, wherein the multi-quantum well structure layer is covered with the energy band distortion structure layer, the energy band distortion structure layer comprises a P-type aluminum indium gallium nitride layer, a U-type aluminum indium gallium nitride layer and an N-type aluminum indium gallium nitride layer, the U-type aluminum indium gallium nitride layer covers the P-type aluminum indium gallium nitride layer, and the N-type aluminum indium galliu