SEMICONDUCTOR DEVICE MANUFACTURING METHOD

A semiconductor device manufacturing method is provided. During semiconductor device manufacturing, damage to a porous low dielectric constant film formed by a SiOC film as an interlayer insulating film can be suppressed when the film is etched. The method includes subjecting a wafer W to film forming treatment adopting isocyanate and urea as raw materials and generating polyurea through evaporation polymerization, thus embedding polyurea into pores (21) of the porous low dielectric constant film (20). Under a situation that through holes are formed first, after through holes (201) are formedin the low dielectric constant film (20) and before a trench (202) is formed, a filler (100) for protection, such as polyurea, is embedded into the through holes (201). Under a situation that a trenchis formed first, after the trench (202) and through holes (201) are formed, the low dielectric constant film is protected through the polyurea in the pores of the film (20) when a mask in the trench(202) is being removed. 本发明