CLEANING COMPOSITIONS FOR REMOVING POST ETCH RESIDUE
The disclosure relates to a cleaning composition that aids in the removal of post-etch residues in the production of semiconductors. There is provided a stock composition comprising: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combinati...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The disclosure relates to a cleaning composition that aids in the removal of post-etch residues in the production of semiconductors. There is provided a stock composition comprising: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combination of at least two or more polyprotic acids or salts thereof, wherein at least one said polyprotic acid or salt thereof contains phosphorous.
本发明涉及一种清洁组合物,其有助于在生产半导体中去除蚀刻后残留物。提供一种储备组合物,其包含:氢氧化四烷基铵碱或季铵化三烷基烷醇胺碱;腐蚀抑制剂;和至少两种或超过两种多元酸或其盐的组合,其中至少一种所述多元酸或其盐含有磷。 |
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