Method of fabricating semiconductor device

The present invention discloses a method of fabricating a semiconductor device. The method includes the steps of: forming a lower layer on a substrate, forming on the lower layer a sacrificial layer and an etching pattern, forming a first spacer layer on the sacrificial layer and the etching pattern...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SOUNGHEE LEE, SANGGYO CHUNG, HYUNCHUL LEE, JISEUNG LEE, YUNSEUNG KANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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