Method of fabricating semiconductor device

The present invention discloses a method of fabricating a semiconductor device. The method includes the steps of: forming a lower layer on a substrate, forming on the lower layer a sacrificial layer and an etching pattern, forming a first spacer layer on the sacrificial layer and the etching pattern, etching the sacrificial layer and the first spacer layer to form a sacrificial pattern and a firstspacer on at least a portion of a top surface of the sacrificial pattern, forming a second spacer layer on the sacrificial pattern and the first spacer, etching the second spacer layer and the firstspacer to form a second spacer on a sidewall of the sacrificial pattern, and partially etching the lower layer to form a pattern. The second spacer is used as an etching mask to partially etch the lower layer. 公开了一种制造半导体器件的方法。该方法包括在衬底上形成下层、在下层上形成牺牲层和蚀刻图案、在牺牲层和蚀刻图案上形成第一间隔层、蚀刻牺牲层和第一间隔层以形成牺牲图案和在牺牲图案的顶表面的至少一部分上的第一间隔物、在牺牲图案和第一间隔物上形成第二间隔层、蚀刻第二间隔层和第一间隔物以在第一牺牲图案的侧壁上形成第二间隔物、以及部分地蚀刻下层以形成图案。第二间隔物用作蚀刻掩模部分地蚀刻下层。