Silicon wafer defect detection method and device

The embodiment of the invention provides a silicon wafer defect detection method and device. The silicon wafer defect detection method comprises the following steps ofperforming metal pollution treatment on to-be-detected sub-components inpreset shapes, wherein the to-be-detected sub-components are...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LIU QINGCHAO, GUO KAICHEN, WEN YINGXI, ZHANG WANWAN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The embodiment of the invention provides a silicon wafer defect detection method and device. The silicon wafer defect detection method comprises the following steps ofperforming metal pollution treatment on to-be-detected sub-components inpreset shapes, wherein the to-be-detected sub-components are parts of to-be-detected components; performing thermal treatment on multiple to-be-detected sub-components, wherein the multiple to-be-detected sub-components belong to different to-be-detected components; and determining the defect of each to-be-detected sub-component according to a treatment result on each to-be-detected sub-component. Through the silicon wafer defect detection method provided by the embodiment of the invention, the thermal treatment can be performed on the multiple to-be-detected sub-components, the pre-treatment time is greatly saved, the defect analysis efficiency is improved, the defect distribution in the silicon wafer can be simply and quickly analyzed, thereby better controlling and avoidi