Silicon wafer defect detection method and device
The embodiment of the invention provides a silicon wafer defect detection method and device. The silicon wafer defect detection method comprises the following steps ofperforming metal pollution treatment on to-be-detected sub-components inpreset shapes, wherein the to-be-detected sub-components are...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The embodiment of the invention provides a silicon wafer defect detection method and device. The silicon wafer defect detection method comprises the following steps ofperforming metal pollution treatment on to-be-detected sub-components inpreset shapes, wherein the to-be-detected sub-components are parts of to-be-detected components; performing thermal treatment on multiple to-be-detected sub-components, wherein the multiple to-be-detected sub-components belong to different to-be-detected components; and determining the defect of each to-be-detected sub-component according to a treatment result on each to-be-detected sub-component. Through the silicon wafer defect detection method provided by the embodiment of the invention, the thermal treatment can be performed on the multiple to-be-detected sub-components, the pre-treatment time is greatly saved, the defect analysis efficiency is improved, the defect distribution in the silicon wafer can be simply and quickly analyzed, thereby better controlling and avoidi |
---|