Method and device for lithographically producing target structure on non-two-dimensional initial structure
The invention relates to a method and to a device for lithographically producing a target structure (030) on a non-two-dimensional initial structure (010) by irradiating a photoresist (100) with at least one lithography beam (060). The method comprises the following steps: a) sensing the topography...
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| creator | BLAICHER MATTHIAS LINDENMANN NICOLE HOOSE TOBIAS KOOS CHRISTIAN GOEDECKE MARIA LAURA DIETRICH PHILIPP-IMMANUEL |
| description | The invention relates to a method and to a device for lithographically producing a target structure (030) on a non-two-dimensional initial structure (010) by irradiating a photoresist (100) with at least one lithography beam (060). The method comprises the following steps: a) sensing the topography (020) of a surface of a non-two-dimensional initial structure (010); b) using at least one test parameter for the lithography beam (060) and determining the interaction of the lithography beam (060) with the initial structure (010) and the change caused thereby in the lithography beam (060) and/or in the target structure (030) to be produced; c) determining at least one correction parameter for the lithography beam (060) in such a way that the change in the lithography beam (060) and/or in the target structure (030) to be produced caused by the interaction of the lithography beam (060) with the initial structure (010) is reduced; and d) producing the desire target structure (030) on the initial structure (010) by i |
| format | Patent |
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The method comprises the following steps: a) sensing the topography (020) of a surface of a non-two-dimensional initial structure (010); b) using at least one test parameter for the lithography beam (060) and determining the interaction of the lithography beam (060) with the initial structure (010) and the change caused thereby in the lithography beam (060) and/or in the target structure (030) to be produced; c) determining at least one correction parameter for the lithography beam (060) in such a way that the change in the lithography beam (060) and/or in the target structure (030) to be produced caused by the interaction of the lithography beam (060) with the initial structure (010) is reduced; and d) producing the desire target structure (030) on the initial structure (010) by i</description><language>chi ; eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190709&DB=EPODOC&CC=CN&NR=109997081A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190709&DB=EPODOC&CC=CN&NR=109997081A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BLAICHER MATTHIAS</creatorcontrib><creatorcontrib>LINDENMANN NICOLE</creatorcontrib><creatorcontrib>HOOSE TOBIAS</creatorcontrib><creatorcontrib>KOOS CHRISTIAN</creatorcontrib><creatorcontrib>GOEDECKE MARIA LAURA</creatorcontrib><creatorcontrib>DIETRICH PHILIPP-IMMANUEL</creatorcontrib><title>Method and device for lithographically producing target structure on non-two-dimensional initial structure</title><description>The invention relates to a method and to a device for lithographically producing a target structure (030) on a non-two-dimensional initial structure (010) by irradiating a photoresist (100) with at least one lithography beam (060). The method comprises the following steps: a) sensing the topography (020) of a surface of a non-two-dimensional initial structure (010); b) using at least one test parameter for the lithography beam (060) and determining the interaction of the lithography beam (060) with the initial structure (010) and the change caused thereby in the lithography beam (060) and/or in the target structure (030) to be produced; c) determining at least one correction parameter for the lithography beam (060) in such a way that the change in the lithography beam (060) and/or in the target structure (030) to be produced caused by the interaction of the lithography beam (060) with the initial structure (010) is reduced; and d) producing the desire target structure (030) on the initial structure (010) by i</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwkAMgOEuDqK-Q3yAQouDdpSiuOjkXsJd2kbO5LhLFd9eB3F2-uDnnxe3M9moHlA8eHqwI-g1QeBPHRLGkR2G8IKY1E-OZQDDNJBBtjQ5mxKBCohKaU8tPd9JMqtgABY2_vgbl8Wsx5Bp9XVRrI-Ha3sqKWpHOaIjIevaS101TbOtdvV-88_zBhyMQlE</recordid><startdate>20190709</startdate><enddate>20190709</enddate><creator>BLAICHER MATTHIAS</creator><creator>LINDENMANN NICOLE</creator><creator>HOOSE TOBIAS</creator><creator>KOOS CHRISTIAN</creator><creator>GOEDECKE MARIA LAURA</creator><creator>DIETRICH PHILIPP-IMMANUEL</creator><scope>EVB</scope></search><sort><creationdate>20190709</creationdate><title>Method and device for lithographically producing target structure on non-two-dimensional initial structure</title><author>BLAICHER MATTHIAS ; LINDENMANN NICOLE ; HOOSE TOBIAS ; KOOS CHRISTIAN ; GOEDECKE MARIA LAURA ; DIETRICH PHILIPP-IMMANUEL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN109997081A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>BLAICHER MATTHIAS</creatorcontrib><creatorcontrib>LINDENMANN NICOLE</creatorcontrib><creatorcontrib>HOOSE TOBIAS</creatorcontrib><creatorcontrib>KOOS CHRISTIAN</creatorcontrib><creatorcontrib>GOEDECKE MARIA LAURA</creatorcontrib><creatorcontrib>DIETRICH PHILIPP-IMMANUEL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BLAICHER MATTHIAS</au><au>LINDENMANN NICOLE</au><au>HOOSE TOBIAS</au><au>KOOS CHRISTIAN</au><au>GOEDECKE MARIA LAURA</au><au>DIETRICH PHILIPP-IMMANUEL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and device for lithographically producing target structure on non-two-dimensional initial structure</title><date>2019-07-09</date><risdate>2019</risdate><abstract>The invention relates to a method and to a device for lithographically producing a target structure (030) on a non-two-dimensional initial structure (010) by irradiating a photoresist (100) with at least one lithography beam (060). The method comprises the following steps: a) sensing the topography (020) of a surface of a non-two-dimensional initial structure (010); b) using at least one test parameter for the lithography beam (060) and determining the interaction of the lithography beam (060) with the initial structure (010) and the change caused thereby in the lithography beam (060) and/or in the target structure (030) to be produced; c) determining at least one correction parameter for the lithography beam (060) in such a way that the change in the lithography beam (060) and/or in the target structure (030) to be produced caused by the interaction of the lithography beam (060) with the initial structure (010) is reduced; and d) producing the desire target structure (030) on the initial structure (010) by i</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | Method and device for lithographically producing target structure on non-two-dimensional initial structure |
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