Method and device for lithographically producing target structure on non-two-dimensional initial structure
The invention relates to a method and to a device for lithographically producing a target structure (030) on a non-two-dimensional initial structure (010) by irradiating a photoresist (100) with at least one lithography beam (060). The method comprises the following steps: a) sensing the topography...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a method and to a device for lithographically producing a target structure (030) on a non-two-dimensional initial structure (010) by irradiating a photoresist (100) with at least one lithography beam (060). The method comprises the following steps: a) sensing the topography (020) of a surface of a non-two-dimensional initial structure (010); b) using at least one test parameter for the lithography beam (060) and determining the interaction of the lithography beam (060) with the initial structure (010) and the change caused thereby in the lithography beam (060) and/or in the target structure (030) to be produced; c) determining at least one correction parameter for the lithography beam (060) in such a way that the change in the lithography beam (060) and/or in the target structure (030) to be produced caused by the interaction of the lithography beam (060) with the initial structure (010) is reduced; and d) producing the desire target structure (030) on the initial structure (010) by i |
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