Preparation method of high-temperature-resistance infrared low-emissivity material and application thereof

The invention belongs to the technical field of infrared stealth, and in particular, relates to a preparation method of a high-temperature-resistance infrared low-emissivity material and application thereof. Zrb2 film materials of electrodes in such microelectronic systems as spaceflight structures,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DAI LINGLU, YIN LIANGJUN, WEN JING, WANG XIN, PENG YUTAO, DENG LONGJIANG, MA XIAODONG, XIE JIANLIANG, JIAN XIAN, YIN JUHANG, ZHANG MIN, LU HAIPENG, YANG MAOXUAN, ZHANG LI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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