Preparation method of high-temperature-resistance infrared low-emissivity material and application thereof

The invention belongs to the technical field of infrared stealth, and in particular, relates to a preparation method of a high-temperature-resistance infrared low-emissivity material and application thereof. Zrb2 film materials of electrodes in such microelectronic systems as spaceflight structures, sensors and brakes are used as high-temperature-resistance infrared low-emissivity films, and are applied to weaponries and aerospace crafts. The method is simple in process, simple in operation, low in cost and excellent in film performance. The infrared emissivity of finally prepared film materials within wave bands of 3-5 microns is lower than 0.2, and the infrared emissivity within the wave bands of 8-14 microns is lower than 0.1; special crystal structures of the Zrb2 film materials integrate the advantages of ceramic materials and metal materials, and achieve high strength and elastic modulus and excellent materialization stability; the melting point of the materials is higher than 3000 DEG C; the materials