Preparation method of high-temperature-resistance infrared low-emissivity material and application thereof
The invention belongs to the technical field of infrared stealth, and in particular, relates to a preparation method of a high-temperature-resistance infrared low-emissivity material and application thereof. Zrb2 film materials of electrodes in such microelectronic systems as spaceflight structures,...
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| creator | DAI LINGLU YIN LIANGJUN WEN JING WANG XIN PENG YUTAO DENG LONGJIANG MA XIAODONG XIE JIANLIANG JIAN XIAN YIN JUHANG ZHANG MIN LU HAIPENG YANG MAOXUAN ZHANG LI |
| description | The invention belongs to the technical field of infrared stealth, and in particular, relates to a preparation method of a high-temperature-resistance infrared low-emissivity material and application thereof. Zrb2 film materials of electrodes in such microelectronic systems as spaceflight structures, sensors and brakes are used as high-temperature-resistance infrared low-emissivity films, and are applied to weaponries and aerospace crafts. The method is simple in process, simple in operation, low in cost and excellent in film performance. The infrared emissivity of finally prepared film materials within wave bands of 3-5 microns is lower than 0.2, and the infrared emissivity within the wave bands of 8-14 microns is lower than 0.1; special crystal structures of the Zrb2 film materials integrate the advantages of ceramic materials and metal materials, and achieve high strength and elastic modulus and excellent materialization stability; the melting point of the materials is higher than 3000 DEG C; the materials |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN109972107A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN109972107A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN109972107A3</originalsourceid><addsrcrecordid>eNqNjD0KwkAUBtNYiHqH5wEWEi1CSgmKlVjYh0fyrftk_9hdFW-voAewmmKGmVe3c0LkxEWCJ4diwkRBk5GrUQUu4qPuCSohSy7sR5B4nThhIhueCk5yloeUFzkuSMKW2E_EMVoZv9tikBD0spppthmrHxfV-rC_9EeFGAbkyCM8ytCfmrrr2k1Tt7vtP80bPfBCUA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Preparation method of high-temperature-resistance infrared low-emissivity material and application thereof</title><source>esp@cenet</source><creator>DAI LINGLU ; YIN LIANGJUN ; WEN JING ; WANG XIN ; PENG YUTAO ; DENG LONGJIANG ; MA XIAODONG ; XIE JIANLIANG ; JIAN XIAN ; YIN JUHANG ; ZHANG MIN ; LU HAIPENG ; YANG MAOXUAN ; ZHANG LI</creator><creatorcontrib>DAI LINGLU ; YIN LIANGJUN ; WEN JING ; WANG XIN ; PENG YUTAO ; DENG LONGJIANG ; MA XIAODONG ; XIE JIANLIANG ; JIAN XIAN ; YIN JUHANG ; ZHANG MIN ; LU HAIPENG ; YANG MAOXUAN ; ZHANG LI</creatorcontrib><description>The invention belongs to the technical field of infrared stealth, and in particular, relates to a preparation method of a high-temperature-resistance infrared low-emissivity material and application thereof. Zrb2 film materials of electrodes in such microelectronic systems as spaceflight structures, sensors and brakes are used as high-temperature-resistance infrared low-emissivity films, and are applied to weaponries and aerospace crafts. The method is simple in process, simple in operation, low in cost and excellent in film performance. The infrared emissivity of finally prepared film materials within wave bands of 3-5 microns is lower than 0.2, and the infrared emissivity within the wave bands of 8-14 microns is lower than 0.1; special crystal structures of the Zrb2 film materials integrate the advantages of ceramic materials and metal materials, and achieve high strength and elastic modulus and excellent materialization stability; the melting point of the materials is higher than 3000 DEG C; the materials</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190705&DB=EPODOC&CC=CN&NR=109972107A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190705&DB=EPODOC&CC=CN&NR=109972107A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DAI LINGLU</creatorcontrib><creatorcontrib>YIN LIANGJUN</creatorcontrib><creatorcontrib>WEN JING</creatorcontrib><creatorcontrib>WANG XIN</creatorcontrib><creatorcontrib>PENG YUTAO</creatorcontrib><creatorcontrib>DENG LONGJIANG</creatorcontrib><creatorcontrib>MA XIAODONG</creatorcontrib><creatorcontrib>XIE JIANLIANG</creatorcontrib><creatorcontrib>JIAN XIAN</creatorcontrib><creatorcontrib>YIN JUHANG</creatorcontrib><creatorcontrib>ZHANG MIN</creatorcontrib><creatorcontrib>LU HAIPENG</creatorcontrib><creatorcontrib>YANG MAOXUAN</creatorcontrib><creatorcontrib>ZHANG LI</creatorcontrib><title>Preparation method of high-temperature-resistance infrared low-emissivity material and application thereof</title><description>The invention belongs to the technical field of infrared stealth, and in particular, relates to a preparation method of a high-temperature-resistance infrared low-emissivity material and application thereof. Zrb2 film materials of electrodes in such microelectronic systems as spaceflight structures, sensors and brakes are used as high-temperature-resistance infrared low-emissivity films, and are applied to weaponries and aerospace crafts. The method is simple in process, simple in operation, low in cost and excellent in film performance. The infrared emissivity of finally prepared film materials within wave bands of 3-5 microns is lower than 0.2, and the infrared emissivity within the wave bands of 8-14 microns is lower than 0.1; special crystal structures of the Zrb2 film materials integrate the advantages of ceramic materials and metal materials, and achieve high strength and elastic modulus and excellent materialization stability; the melting point of the materials is higher than 3000 DEG C; the materials</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjD0KwkAUBtNYiHqH5wEWEi1CSgmKlVjYh0fyrftk_9hdFW-voAewmmKGmVe3c0LkxEWCJ4diwkRBk5GrUQUu4qPuCSohSy7sR5B4nThhIhueCk5yloeUFzkuSMKW2E_EMVoZv9tikBD0spppthmrHxfV-rC_9EeFGAbkyCM8ytCfmrrr2k1Tt7vtP80bPfBCUA</recordid><startdate>20190705</startdate><enddate>20190705</enddate><creator>DAI LINGLU</creator><creator>YIN LIANGJUN</creator><creator>WEN JING</creator><creator>WANG XIN</creator><creator>PENG YUTAO</creator><creator>DENG LONGJIANG</creator><creator>MA XIAODONG</creator><creator>XIE JIANLIANG</creator><creator>JIAN XIAN</creator><creator>YIN JUHANG</creator><creator>ZHANG MIN</creator><creator>LU HAIPENG</creator><creator>YANG MAOXUAN</creator><creator>ZHANG LI</creator><scope>EVB</scope></search><sort><creationdate>20190705</creationdate><title>Preparation method of high-temperature-resistance infrared low-emissivity material and application thereof</title><author>DAI LINGLU ; YIN LIANGJUN ; WEN JING ; WANG XIN ; PENG YUTAO ; DENG LONGJIANG ; MA XIAODONG ; XIE JIANLIANG ; JIAN XIAN ; YIN JUHANG ; ZHANG MIN ; LU HAIPENG ; YANG MAOXUAN ; ZHANG LI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN109972107A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>DAI LINGLU</creatorcontrib><creatorcontrib>YIN LIANGJUN</creatorcontrib><creatorcontrib>WEN JING</creatorcontrib><creatorcontrib>WANG XIN</creatorcontrib><creatorcontrib>PENG YUTAO</creatorcontrib><creatorcontrib>DENG LONGJIANG</creatorcontrib><creatorcontrib>MA XIAODONG</creatorcontrib><creatorcontrib>XIE JIANLIANG</creatorcontrib><creatorcontrib>JIAN XIAN</creatorcontrib><creatorcontrib>YIN JUHANG</creatorcontrib><creatorcontrib>ZHANG MIN</creatorcontrib><creatorcontrib>LU HAIPENG</creatorcontrib><creatorcontrib>YANG MAOXUAN</creatorcontrib><creatorcontrib>ZHANG LI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DAI LINGLU</au><au>YIN LIANGJUN</au><au>WEN JING</au><au>WANG XIN</au><au>PENG YUTAO</au><au>DENG LONGJIANG</au><au>MA XIAODONG</au><au>XIE JIANLIANG</au><au>JIAN XIAN</au><au>YIN JUHANG</au><au>ZHANG MIN</au><au>LU HAIPENG</au><au>YANG MAOXUAN</au><au>ZHANG LI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Preparation method of high-temperature-resistance infrared low-emissivity material and application thereof</title><date>2019-07-05</date><risdate>2019</risdate><abstract>The invention belongs to the technical field of infrared stealth, and in particular, relates to a preparation method of a high-temperature-resistance infrared low-emissivity material and application thereof. Zrb2 film materials of electrodes in such microelectronic systems as spaceflight structures, sensors and brakes are used as high-temperature-resistance infrared low-emissivity films, and are applied to weaponries and aerospace crafts. The method is simple in process, simple in operation, low in cost and excellent in film performance. The infrared emissivity of finally prepared film materials within wave bands of 3-5 microns is lower than 0.2, and the infrared emissivity within the wave bands of 8-14 microns is lower than 0.1; special crystal structures of the Zrb2 film materials integrate the advantages of ceramic materials and metal materials, and achieve high strength and elastic modulus and excellent materialization stability; the melting point of the materials is higher than 3000 DEG C; the materials</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Preparation method of high-temperature-resistance infrared low-emissivity material and application thereof |
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