Light emitting diode epitaxial sheet and manufacturing method thereof

The invention relates to a light emitting diode epitaxial sheet. The light emitting diode epitaxial sheet comprises a sapphire substrate, and a buffer layer, an N-type semiconductor layer, a light emitting active layer and a P-type semiconductor layer which cover the C surface of the sapphire substr...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TU BOMIN, QIU JINGXUE, LIN YAWEN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to a light emitting diode epitaxial sheet. The light emitting diode epitaxial sheet comprises a sapphire substrate, and a buffer layer, an N-type semiconductor layer, a light emitting active layer and a P-type semiconductor layer which cover the C surface of the sapphire substrate in turn. The light emitting active layer comprises at least one layer of quantum well structure.Each layer of quantum well structure comprises a quantum well region, a gradient region, a high-aluminum region and a barrier region, wherein the barrier region covers and is connected with the high-aluminum region, the P-type semiconductor layer covers and is connected with the barrier region, the material of the gradient region is aluminum-doped or indium-doped gallium nitride, and the contentof aluminum or indium varies linearly from the side near the N-type semiconductor layer to the side away from the N-type semiconductor layer. The invention also provides a manufacturing method of thelight emitting diode epitax