Material of detecting photoresist and method of fabricating a semiconductor device

A material for detecting photoresist and a method of fabricating a semiconductor device are provided. The material for detecting photoresist may include a macrocyclic molecule having a hollow structure and a fluorescent substance which is labeled on the macrocyclic molecule, and the macrocyclic mole...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KIM SOO-YOUNG, KIM BOO-DEUK, JANG YOON-JUNG, LEE SOO-JIN
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A material for detecting photoresist and a method of fabricating a semiconductor device are provided. The material for detecting photoresist may include a macrocyclic molecule having a hollow structure and a fluorescent substance which is labeled on the macrocyclic molecule, and the macrocyclic molecule is at least one of cyclodexrin, cucurbituril, calixarene, pillararene and catenane. 提供了用于检测光刻胶的材料和制造半导体器件的方法。所述用于检测光刻胶的材料可以包括具有中空结构的大环分子和在所述大环分子上标记的荧光物质,所述大环分子是环糊精、葫芦脲、杯芳烃、柱芳烃和索烃中的至少一种。