Three-dimensional tapered nano-layer film structure, preparation method thereof and application thereof

The invention belongs to the field of novel energy technical development, in particular to a three-dimensional tapered nano-layer film structure, a preparation method thereof and application thereof.The three-dimensional tapered nano-layer film structure provided by the invention comprises silicon d...

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Bibliographische Detailangaben
Hauptverfasser:	KONG ARU, CAI BOYUAN, SHI PENG, YUAN XIAOCONG, LIU MINHANG, CHU XIANWEI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BLASTING CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMBINED HEATING AND REFRIGERATION SYSTEMS DIFFUSION TREATMENT OF METALLIC MATERIAL HEAT PUMP SYSTEMS HEATING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIGHTING LIQUEFACTION SOLIDIFICATION OF GASES MANUFACTURE OR STORAGE OF ICE MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES MECHANICAL ENGINEERING METALLURGY NANOTECHNOLOGY PERFORMING OPERATIONS REFRIGERATION MACHINES, PLANTS OR SYSTEMS REFRIGERATION OR COOLING SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING WEAPONS
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Beschreibung
Zusammenfassung:	The invention belongs to the field of novel energy technical development, in particular to a three-dimensional tapered nano-layer film structure, a preparation method thereof and application thereof.The three-dimensional tapered nano-layer film structure provided by the invention comprises silicon dioxide layer-hafnium dioxide composite layers and sliver layers, wherein silicon dioxide layers arearranged above hafnium dioxide layers; number of the silicon dioxide layer-hafnium dioxide composite layers is greater than 10; and the silicon dioxide layer-hafnium dioxide composite layers are arranged above the sliver layers. The invention further provides a preparation method for the three-dimensional tapered nano-layer film structure, and further provides application of the three-dimensionaltapered nano-layer film structure or a product prepared by the preparation method in a radiation cooling device. The three-dimensional tapered nano-layer film structure is introduced, so that high-performance dual-window atmos