CHANGING A SWITCHING STATE OF A SWITCHING HALF-BRIDGE
The invention relates to a method for changing a switching state of a switching half-bridge (1), which has two field-effect transistors (5, 7), from a first switching state, in which a gate-source voltage (UGS1) of a first field-effect transistor (5) assumes a switch-on level (Uon) and a gate-source...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a method for changing a switching state of a switching half-bridge (1), which has two field-effect transistors (5, 7), from a first switching state, in which a gate-source voltage (UGS1) of a first field-effect transistor (5) assumes a switch-on level (Uon) and a gate-source voltage (UGS2) of the second field-effect transistor (7) assumes a first switch-off level (Uoff1),to a second switching state, in which the gate-source voltage (UGS1) of the first field-effect transistor (5) assumes the first switch-off level (Uoff1) and the gate-source voltage (UGS2) of the second field-effect transistor (7) assumes the switch-on level (Uon). First, the gate-source voltage (UGS1) of the first field-effect transistor (5) is changed from the switch-on level (Uon) to a second switch-off level (Uoff2), the magnitude of which is greater than the magnitude of the first switch-off level (Uoff1). Then, the gate-source voltage (UGS2) of the second field-effect transistor (7) is changed from the first swit |
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