CHANGING A SWITCHING STATE OF A SWITCHING HALF-BRIDGE

The invention relates to a method for changing a switching state of a switching half-bridge (1), which has two field-effect transistors (5, 7), from a first switching state, in which a gate-source voltage (UGS1) of a first field-effect transistor (5) assumes a switch-on level (Uon) and a gate-source...

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Hauptverfasser: BAKRAN MARK-MATTHIAS, MARZ ANDREAS
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to a method for changing a switching state of a switching half-bridge (1), which has two field-effect transistors (5, 7), from a first switching state, in which a gate-source voltage (UGS1) of a first field-effect transistor (5) assumes a switch-on level (Uon) and a gate-source voltage (UGS2) of the second field-effect transistor (7) assumes a first switch-off level (Uoff1),to a second switching state, in which the gate-source voltage (UGS1) of the first field-effect transistor (5) assumes the first switch-off level (Uoff1) and the gate-source voltage (UGS2) of the second field-effect transistor (7) assumes the switch-on level (Uon). First, the gate-source voltage (UGS1) of the first field-effect transistor (5) is changed from the switch-on level (Uon) to a second switch-off level (Uoff2), the magnitude of which is greater than the magnitude of the first switch-off level (Uoff1). Then, the gate-source voltage (UGS2) of the second field-effect transistor (7) is changed from the first swit