IMPLANT REGROWTH VCSEL AND VCSEL ARRAY WITH HETEROGENEOUS COMBINATION OF DIFFERENT VCSEL TYPES

A non-planarized VCSEL can include: a blocking region over or under an active region, the blocking region having a first thickness; one or more conductive channel cores in the blocking region, the oneor more conductive channel cores having a second thickness that is larger than the first thickness, wherein the blocking region is defined by having an implant and the one or more conductive channelcores are devoid of the implant, wherein the blocking region is lateral the one or more conductive channel cores, the blocking region and one or more conductive channel cores being an isolation region; and a non-planarized semiconductor region of one or more non-planarized semiconductor layers over the isolation region. The VCSEL can include a planarized bottom mirror region below the active region and a non-planarized top mirror region above the isolation region, or a non- planarized bottom mirror region below the active region. 非平坦化VCSEL可包含：在有源区上方或下方的阻挡区，所述阻挡区具有第一厚度；阻挡区中的一个或更多个导电沟道芯，所述一个或更多个导电沟道芯具有大于第一厚度的第二厚度，其中所述阻挡区