Method for covering thin film in hole and semiconductor processing apparatus

The present invention provides a method for covering a thin film in a hole and a semiconductor processing apparatus. The method of covering a thin film in the hole comprises the following steps: step1, depositing a thin film on the bottom of the hole and at least a part of the sidewall by a sputtering process; and step 2, bombarding the positively charged process gas ions on the thin film at thebottom of the hole by an etching process to improve the step coverage of the sidewall near the bottom of the hole. The method of covering the film in the hole can not only improve the process performance, but also give consideration to the production capacity of the apparatus. 本发明提供一种在孔内覆盖薄膜的方法及半导体加工设备。该在孔内覆盖薄膜的方法包括以下步骤：步骤一，通过溅射工艺在孔的底部及至少部分侧壁上沉积形成薄膜；步骤二，通过刻蚀工艺使带正电荷的工艺气体离子轰击所述孔的底部的所述薄膜以提高所述孔的靠近底部的侧壁的台阶覆盖率。该在孔内覆盖薄膜的方法既能提高工艺性能，又能兼顾设备的产能。