STRUCTURE, METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR ELEMENT, AND ELECTRONIC CIRCUIT

A structure includes a metal oxide semiconductor layer; and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and the film thickness of the noble metal oxide layer is over 10 nm. 一种结构物，包含金属氧化物半导体层与贵金属氧化物层，所述金属氧化物半导体层与所述...

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Bibliographische Detailangaben
Hauptverfasser:	UEOKA YOSHIHIRO, NAGASAKI YOSHIKAZU, TSURUMA YUKI, KAWASHIMA EMI, SEKIYA TAKASHI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A structure includes a metal oxide semiconductor layer; and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and the film thickness of the noble metal oxide layer is over 10 nm. 一种结构物，包含金属氧化物半导体层与贵金属氧化物层，所述金属氧化物半导体层与所述贵金属氧化物层邻接，所述贵金属氧化物层的膜厚超过10nm。