PLUGS FOR INTERCONNECT LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes an inter-layer dielectric (ILD) layer above a substrate. A conductive interconnect line is in a trench in the ILD layer, the conductive interconnect line having a first portion and a second portion, the first portion laterally adjacent to the second portion. A dielectric plug is between and laterally adjacent to the firstand second portions of the conductive interconnect line, the dielectric plug comprising a metal oxide material. 本公开的实施例属于先进的集成电路结构制造的领域，并且具体属于10纳米节点以及更小的集成电路结构制造和所得到的结构的领域。在示例中，一种集成电路结构包括在基板上方的层间电介质（ILD）层。导电互连线在ILD层中处于沟槽中，导电互连线具有第一部分和第二部分，第一部分与第二部分侧向相邻。电介质插塞处于导电互连线的第一部分和第二部分之间并且与导电互连线的第一部分和第二部分侧向相邻，电介质插塞包括金属氧化物材料。