Graphene and preparation method thereof

The invention discloses a preparation method of graphene. The method is s follows: graphene is prepared on the surface of a copper foil activated by the acid etching, wherein the acid is at least oneof phosphoric acid, hydrochloric acid and nitric acid. The invention provides an atmospheric pressure chemical vapor deposition method which is capable of preparing the high quality graphene. The graphene prepared by the method has negligible defect peaks which indicate that the graphene has few defects; and has high transmittance which indicates that the prepared graphene has relatively few layers and is a single or double layer graphene. According to the preparation method of graphene, the preparation process and equipment are simple, the price is low, and the energy consumption is relatively low, so that the method is easy to achieve large-scale production. 本发明公开了一种石墨烯的制备方法，所述方法为：在经过酸蚀活化的铜箔表面制备得到石墨烯；所述酸为磷酸、盐酸、硝酸中的至少一种。本发明提供了一种能够制备出高质量石墨烯的常压化学气相沉积法，用该方法制备的石墨烯具有可以忽略的缺陷峰，表明存在的缺陷少；透光度高，说明制备出的石墨烯层数较少，为单层或双层石墨烯；该方法制备