Proximity exposure method

Disclosed is a proximity exposure method wherein: a mask (M), in which mask patterns (31) larger than the resolution limit of a resist (R) are formed, is prepared with respect to a resist pattern (43)having the smallest pitch (P) that is equal to or smaller than the resolution limit of the resist (R); in a first exposure step, after the mask patterns (31) are transferred to a workpiece (W) by means of exposure, the mask (M) and the workpiece (W) are relatively step-moved by the pitch (P) of the resist pattern (43); and in a second exposure step, the mask patterns (31) are transferred again tothe workpiece (W) by means of exposure. 在接近式曝光方法中，准备掩模(M)，该掩模(M)相对于具有抗蚀剂(R)的分辨率极限以下的最小间距(P)的抗蚀剂图案(43)形成有间距大于抗蚀剂(R)的分辨率极限的掩模图案(31)。在第一曝光工序中，在将掩模图案(31)曝光并转印于工件(W)之后，使掩模(M)和工件(W)仅相对步进移动抗蚀剂图案(43)的间距(P)的量，并在第二曝光工序中将掩模图案(31)再次曝光并转印到工件(W)上。