Sense amplifier with negative threshold sensing for non-volatile memory

The invention relates to a sense amplifier with negative threshold sensing for a non-volatile memory. A sense amplifier for a memory circuit that can sense into the deep negative voltage threshold region is described. A selected memory cell is sensed by discharging a source line through the memory c...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NGUYEN HAO, LEE SEUNGPIL
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!