Sense amplifier with negative threshold sensing for non-volatile memory

The invention relates to a sense amplifier with negative threshold sensing for a non-volatile memory. A sense amplifier for a memory circuit that can sense into the deep negative voltage threshold region is described. A selected memory cell is sensed by discharging a source line through the memory cell into the bit line and sense amplifier. While discharging the source line through the memory cellinto the sense amplifier, a voltage level on the discharge path is used to set the conductivity of a discharge transistor to a level corresponding to the conductivity of the selected memory cell. A sense node is then discharged through the discharge transistor. To reduce noise, a decoupling capacitor is connected to the control gate of the discharge transistor and an auxiliary keeper current is run through the discharge transistor. 本发明题为"用于非易失性存储器的利用负阈值感测的感测放大器"。本发明描述了一种用于存储器电路的感测放大器，该感测放大器可以感测到深负电压阈值区域中。通过将源极线通过存储器单元放电到位线和感测放大器来感测所选择的存储器单元。在通过存储器单元将源极线放电到感测放大器中时，放电路径上的电压电平用于将放电晶体管的导电率设置到与所选择的存储器单元的导电率相对应的水平。然后，感测节点通