SPUTTERING SOURCE

A sputtering source comprises two facing plate shaped targets (5, 7) and a magnet arrangement (185,187) along each of the targets. An open coating outlet area (12) from the reaction space between thetargets is limited by facing rims (9, 10) of the two plate shaped targets. Catcher plates (207, 205)...

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Bibliographische Detailangaben
Hauptverfasser:	FELZER HEINZ, JOGER DOMINIK, CHESEAUX MICHAEL, ROHRMANN HARTMUT
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A sputtering source comprises two facing plate shaped targets (5, 7) and a magnet arrangement (185,187) along each of the targets. An open coating outlet area (12) from the reaction space between thetargets is limited by facing rims (9, 10) of the two plate shaped targets. Catcher plates (207, 205) along each of the rims respectively project in a direction from the rims towards each other into the open coating outlet area (12), thereby restricting the open coating outlet area (12) as limited by the mutually facing rims (9,10) of the two plate shaped targets. 溅射源包括两个面向的板形靶材（5，7）和沿着每个靶材的磁体布置结构（18，18）。在靶材之间的反应空间的开口涂覆出口区域（12）由这两个板形靶材的面向的边沿（9，10）限定。沿着每个边沿的捕集板（20，20）分别在从边沿朝着彼此的方向上突出到开口涂覆出口区域（12）中，从而约束由这两个板形靶材的相互面向的边沿（9，10）所限制的开口涂覆出口区域（12）。