INTEGRATED CIRCUIT FOR LOW POWER SRAM

An integrated circuit structure includes a semiconductor substrate, an active area, a gate electrode, and a butted contact. The active area is oriented in a first direction and has at least one toothportion extending in a second direction in the semiconductor substrate. The gate electrode overlies the active area and extends in the second direction. The butted contact has a first portion above the gate electrode and a second portion above the active area. A portion of the second portion of the butted contact lands on the tooth portion. 一集成电路结构包含半导体基材、主动区域、栅电极以及毗连接触。此主动区域朝向第一方向，且具有至少一个齿状部位，此齿状部位在半导体基材中沿着第二方向延伸。此栅电极覆盖在主动区域上，并沿着第二方向延伸。毗连接触具有位于栅电极上方的第一部位及位于主动区域上方的第二部位。毗连接触的第二部位的一部分着陆于齿状部位上。