Organic thin film transistor active layer graphical method

The invention discloses an organic thin film transistor active layer graphical method. The organic thin film transistor active layer graphical method comprises the steps that an active layer is formedon a substrate with a prepared bottom electrode, the active layer is rotatably coated with a layer o...

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Bibliographische Detailangaben
Hauptverfasser: HUANG FANMING, CHU JUNHAO, HU ZHIGAO, LI WENWU
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses an organic thin film transistor active layer graphical method. The organic thin film transistor active layer graphical method comprises the steps that an active layer is formedon a substrate with a prepared bottom electrode, the active layer is rotatably coated with a layer of dielectric material to be used as an intermediate buffer layer, a graphical metal protection layer is formed on the intermediate buffer layer by a metal pattern plate, the active layer and the intermediate buffer layer not covered by the metal protection layer are removed by adopting dry oxygen etching, finally, the redundant intermediate buffer layer and metal protection layer are stripped, and thus the graphical active layer is obtained. According to the organic thin film transistor activelayer graphical method, using of expensive photoetching machines and photoetching materials is not needed, and the corrosion and dissolution of the active layer of a semiconductor are avoided; and theorganic thin film transist