Method for growing graphene on Si/C composite material, material obtained through such method, and application of such material

The invention relates to a method for growing graphene on a Si/C composite material, a material obtained through such method, and application of such material. The method comprises the following steps: (1) orderly depositing a nickel film and a copper film on Si/C compound through a chemical vapor deposition method, and obtaining Cu/Ni/Si/C compound; (2) placing the Cu/Ni/Si/C compound in argon and hydrogen environment and performing annealing treatment; (3) placing the Cu/Ni/Si/C compound treated in the step (2) in methane and hydrogen atmosphere to react through the chemical vapor depositionmethod, cooling to room temperature under protection of argon, and consequently, growing out the graphene on the Si/C composite material. With the method provided by the invention, adding of the graphene in a battery core material or transfer and coating technologies for a graphene thin film are reduced, and damage to chemical properties of the existing graphene can be avoided. 本发明涉及一种在Si/C复合材料上生长石墨烯的方法、利用该方法制得的材料以及其应用。该