Sensor for measuring doping ratio in thin film, methods and device

The invention discloses a sensor for measuring doping ratio in a thin film, methods and a device. The sensor comprises a control electrode layer, an insulating layer and a conductive electrode layer,wherein the conductive electrode layer can comprise at least two conductive sub electrodes which are arranged at intervals. When a to-be-measured thin film doped with predetermined dopant ions is formed on a substrate base plate, a first voltage is applied to the control electrode layer, a second voltage is applied to one conductive sub electrode electrically connected with the to-be-measured thinfilm and a detection signal outputted by the other conductive sub electrode electrically connected with the to-be-measured thin film is obtained, so that the doping ratios of the predetermined dopantions in the to-be-measured thin film can be determined according to the detection signal and the effect of measuring the doping ratio of the predetermined dopant ions in the to-be-measured thin filmcan be realized. 本发明公开了一种用于测