Preparation method of MTM anti-fuse under through hole

The invention discloses a preparation method of an MTM anti-fuse under a through hole, and belongs to the technical field of semiconductor manufacturing. The method comprises the steps of: forming aninter-metal dielectric layer and a lower-electrode conductive layer in order on a substrate material, depositing a lower-electrode blocking layer at the surface of the lower-electrode conductive layer, and forming a groove window on the lower-electrode blocking layer; depositing an anti-fuse film layer at the surface of the lower-electrode blocking layer where the groove window is formed, and depositing an upper-electrode blocking layer at the surface of the anti-fuse film layer; etching the upper-electrode blocking layer and the anti-fuse film layer; and etching the lower-electrode blocking layer and the lower-electrode conductive layer, filling the through hole with a tungsten plug, and performing sputtering on the upper-electrode conductive layer. The preparation method of an MTM anti-fuse under the through hol