HIGH PERFORMANCE SUPER-BETA NPN (SBNPN)

In described examples, a method for making a super [beta] NPN (SBNPN) transistor includes: depositing a tetraethyl orthosilicate (TEOS) layer on a P type epitaxial layer (1102); depositing a nitride layer on the TEOS layer (1102); patterning an emitter region of the SBNPN transistor by selectively e...

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Bibliographische Detailangaben
Hauptverfasser:	STAUFER BERTHOLD GEORG, SCHWARTZ WOLFGANG, BENNA BERNHARD
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	In described examples, a method for making a super [beta] NPN (SBNPN) transistor includes: depositing a tetraethyl orthosilicate (TEOS) layer on a P type epitaxial layer (1102); depositing a nitride layer on the TEOS layer (1102); patterning an emitter region of the SBNPN transistor by selectively etching away portions of the nitride layer and the TEOS layer (1104); depositing a second TEOS layeron top of the nitride layer, along sides of the nitride layer and the TEOS layer, and on top of the P type epitaxial layer (1110); and implanting the P type epitaxial layer through the second TEOS layer with N type ions to form the emitter region of the SBNPN transistor (1114). 在所描述示例中，种用于制造超βNPN(SBNPN)晶体管的方法包括：在P型外延层上沉积正硅酸乙酯(TEOS)层(1102)；在TEOS层上沉积氮化物层(1102)；通过选择性地蚀刻掉部分氮化物层和TEOS层来图案化SBNPN晶体管的发射极区域(1104)；在氮化物层的顶部、沿着氮化物层和TEOS层的侧面以及在P型外延层的顶部上沉积第二TEOS层(1110)；以及通过第二TEOS层利用N型离子注入P型外延层，以形成SBNPN晶体管的发射极区域(1114)。