Method for growing zinc oxide crystal whiskers on surfaces of silicon carbide fibers and silicon carbide fibers
The invention relates to a method for growing zinc oxide crystal whiskers on surfaces of silicon carbide fibers and silicon carbide fibers. Firstly, under the water bath condition of 0-20 DEG C, alkali liquor is dropwise added into a zinc salt solution to form mixed liquor, and stirring is conducted...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a method for growing zinc oxide crystal whiskers on surfaces of silicon carbide fibers and silicon carbide fibers. Firstly, under the water bath condition of 0-20 DEG C, alkali liquor is dropwise added into a zinc salt solution to form mixed liquor, and stirring is conducted; then, the water bath temperature is adjusted to 20-40 DEG C, a fluorine-carbon type surface activeagent is added into the mixed liquor, stirring is conducted for 30-120 min at constant temperature, and precursor liquor is obtained; a zinc oxide thin film or nanometer zinc oxide particles are compounded on the surfaces of the silicon carbide fibers or silicon carbide fiber textile; the silicon carbide fibers or the silicon carbide fiber textile is soaked into the precursor liquor, sealed, keptwarm for 1-12 h at the temperature of 50-200 DEG C, taken out, cleaned and dried, so that a zinc oxide crystal whisker/silicon carbide fiber composite material is obtained. The nanometer zinc oxide crystal whiskers with high |
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