Organic semiconductor device without electron transport layer and preparation method of organic semiconductor device

The invention relates to an organic semiconductor device without an electron transport layer and a preparation method of the organic semiconductor device; a device comprises a transparent substrate, an organic material thin film, a metal Ti thin film and a metal electrode thin film from the bottom u...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WANG YING, GU QIONG, MAO XIUFEN, DENG DAQING
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to an organic semiconductor device without an electron transport layer and a preparation method of the organic semiconductor device; a device comprises a transparent substrate, an organic material thin film, a metal Ti thin film and a metal electrode thin film from the bottom up in sequence; the preparation method comprises the following steps of firstly, preparing a layer oforganic material thin film on the surface of the transparent substrate, and then adopting a method of heat evaporation, electroplating or magnetron sputtering, preparing a metal Ti thin film on the surface of the organic material thin film, and finally, covering a layer of metal electrode material on the surface of the Ti thin film, so as to obtain the organic semiconductor device without the electron transport layer. By adopting the device without the electron transport layer structure, the thin film preparation process can be greatly simplified, and the use of part of materials is avoided,so that the process link f