Method of manufacturing integrated circuit device

Provided is a method of manufacturing an integrated circuit device. The method includes: forming, on a substrate, a developable bottom anti-reflective coating (DBARC) layer including a chemically amplified polymer; forming, on the DBARC layer, a photoresist layer including a non-chemically amplified resin and a photoacid generator (PAG); generating an acid from the PAG in a first region selected from the photoresist layer, by exposing the first region; diffusing the acid in the exposed first region into a first DBARC region of the DBARC layer, the first DBARC region facing the first region; and removing the first region and the first DBARC region by developing the photoresist layer and the DBARC layer. 提供了种制造集成电路器件的方法，所述方法包括：在基板上形成包括化学增强聚合物的可显影底部抗反射涂覆层；在所述可显影底部抗反射涂覆层上形成包括非化学增强树脂和光酸产生剂的光致抗蚀剂层；通过曝光所述第区域，在选自所述光致抗蚀剂层的第区域中从所述光酸产生剂产生酸；将所述曝光的第区域中的酸扩散到所述可显影底部抗反射涂覆层的第可显影底部抗反射涂覆区域中，所述第可显影底部抗反射涂覆区域面向所述第区域；以及通过将所述光致抗蚀剂层和所述可显影底部抗反射涂覆层显影来去除所述第区域和所述第可显影底部抗反射涂覆区域。