Silicon carbide substrate recovery method, silicon carbide substrate, and recovery system

The present invention relates to the technical field of semiconductors and semiconductor manufacturing, especially to a silicon carbide substrate recovery method, a silicon carbide substrate, and a recovery system. The silicon carbide substrate recovery method treats an epitaxial wafer by combination of chemical etching and physical grinding to quickly and effectively remove the epitaxial layer onthe epitaxial wafer to obtain a silicon carbide substrate with a flat and smooth surface, performs annealing processing to repair the surface defects (such as scratches) caused by grinding to obtaina silicon carbide substrate that can be used directly. The method is simple in principle and controllable in recovery process. 本发明涉及半导体及半导体制造技术领域，具体而言，涉及种碳化硅衬底回收方法、碳化硅衬底及回收系统。其中，所述回收方法通过采用化学腐蚀及物理研磨相结合的方式对外延片进行处理，可以快速有效的去除外延片上的外延层，获得表面平整光滑的碳化硅衬底。再通过退火处理，能够修复研磨造成的表面缺陷(比如，划痕)，获得可直接使用的碳化硅衬底。该方法具有原理简单、回收过程可控的优点。