Environment-friendly Bi-based perovskite resistive memory and preparation method thereof

The invention, which belongs to the technical field of functional devices, discloses an environment-friendly Bi-based perovskite resistive memory comprising a bottom electrode, a Bi-based perovskite resistive layer arranged on the upper surface of the bottom electrode, and a top electrode disposed on the upper surface of the resistive layer. The resistive layer is made of a material being a MA3Bi2I9 film. Besides, the preparation method of an environment-friendly Bi-based perovskite resistive memory includes: carrying out spinning coating of a MA3Bi2I9 film layer on the surface of a preprocessed bottom electrode and carrying out evaporation or sputtering coating of a metal electrode on the surface of the MA3Bi2I9 film layer. According to the invention, the MA3Bi2I9 film is prepared on thesurface of the bottom electrode and the prepared MA3Bi2I9 film has a compact surface. Moreover, the preparation process is simple, the controllability is high, and the product repeatability rate is high. Besides, the resistiv