A layout pattern of memory elements composed of static random access memories

The invention discloses a layout pattern of memory elements composed of a static random access memory (SRAM). The layout pattern includes four memory cells located on a substrate, each memory cell islocated in a non-rectangular area, and the four non-rectangular regions together form a rectangular region, wherein each memory cell comprises a first inverter comprising a first pull-up transistor (PL1) and a first pull-down transistor (PD1); a second inverter includes a second pull-up transistor (PL2) and a second pull-down transistor (PD2), an access transistor (PG) and a switching transistor (SW), wherein a source of the PG is connected to an input of the first inverter and a drain of the SW, A source of the SW is connected to an output of the second inverter, wherein the PD1, the PD2, theSW and the PG jointly comprise a same first diffusion region, and the PL1 and the PL2 jointly comprise a same second diffusion region. 本发明公开种由静态随机存取存储器(static random-access memory，SRAM)组成的存储器元件的布局图案，包含四个存储单元位于基底上，各存储单元分别位于非矩形