Cerium dioxide nanorod as well as preparation method and application thereof

The invention relates to the field of nano material preparation, and in particular to a preparation method of a cerium dioxide nanorod. The preparation method comprises the following steps that in a mixed atmosphere of Ar and O2, Si (100) single crystal wafer serves as a substrate, Ce serves as a target material, and grazing incidence magnetron sputtering is carried out to obtain the cerium dioxide nanorod. The cerium dioxide nanorod with the triangular pyramid surface can be obtained through the grazing incidence magnetron sputtering method, the contact angle between the cerium dioxide nanorod and the water prepared by the preparation method is larger than or equal to 107.5 degrees, the maximum contact angle can reach 143.2 degrees, and is the maximum contact angle value of the existing cerium dioxide material. 本发明涉及纳米材料制备领域，尤其涉及种二氧化铈纳米棒的制备方法，所述制备方法包括以下步骤：在Ar和O的混合气氛中，以Si(100)单晶片作为衬底，以Ce作为靶材，进行掠入射磁控溅射，得到二氧化铈纳米棒。本发明通过掠入射磁控溅射方法可以得到表面为三棱锥的二氧化铈纳米棒，利用本发明提供的制备方法制备得到的二氧化铈纳米棒与水的接触角≥107.5°，最大可达143.2°，是目前二氧化铈材料的最大接触角值。