Bonding process for target material for liquid crystal display, semiconductor and electronics
The invention discloses a bonding process for a target material for liquid crystal display, a semiconductor and electronics. The bonding process comprises the following sequentially performed steps that a bonding material preparation step is performed, wherein a pure metal indium wire is prepared; a...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a bonding process for a target material for liquid crystal display, a semiconductor and electronics. The bonding process comprises the following sequentially performed steps that a bonding material preparation step is performed, wherein a pure metal indium wire is prepared; a plasma spraying step is performed, wherein the prepared pure metal indium wire is placed into a plasma spraying device to be heated to be in a molten state, and the molten-state pure metal indium is correspondingly sprayed on the corresponding surfaces of the target material and a back plate through the plasma spraying device; and a bonding step is performed, wherein the target material and the back plate which are subjected to surface spraying are bonded, and a preset pressure is applied to the upper surface of the bonded finished product for cooling. According to the bonding process, the oxidation of the bonding material can be reduced.
本发明公开了种液晶显示、半导体、电子用靶材的粘接工艺,包括依次进行的粘结材料准备步骤,准备纯金属铟丝;熔射步骤,将准备好的纯金属铟丝放入熔射设备中加热至 |
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