Deep ultraviolet semiconductor light emitting diode device and preparation method thereof

A deep ultraviolet semiconductor light emitting diode device comprises a substrate, an ultraviolet chip, a first plastic outer shell, a second plastic outer shell, an insulating member and a lens, wherein a positive electrode region and a negative electrode region of the substrate are separated by means of the insulating member, the first plastic outer shell is fixed on the metal substrate and forms a bowl, the ultraviolet chip is fixed on the metal substrate and positioned in the bowl, the second plastic outer shell is arranged on the first plastic outer shell and encloses the ultraviolet chip, the lens and the second plastic outer shell are connected and cover a bowl opening of the bowl, and a reflective layer is formed on the outer wall surface of the lens or the inner wall surface of the bowl. According to the deep ultraviolet semiconductor light emitting diode device, a whole new packaging structure is designed, the overall structure is very simple, the whole preparation process is simple and feasible co