Method for preparing thin film transistor

The invention relates to a method for preparing a ZnO:Li film, belonging to the field of film preparation. The method comprises the steps of: using p-Si as a substrate and a gate electrode; and forming a silicon dioxide as a gate by thermal oxidation on a silicon substrate; before vacuum deposition of an active layer film, cutting the substrate into suitable sizes, performing cleaning of the substrate, the sputtering mixtures with targets of ZnO-Li2O, performing vacuum supply of the deposition chamber, introducing working gas of argon Ar to start ignition and sputtering, and change the sputtering time to regulate and control the thickness of the active layer ZnO:Li film to obtain a ZnO:Li film. The preparation method of the present invention is simple in process and easy to operate. 种ZnO：Li薄膜的制备方法，属于薄膜制备领域，其特征在于包括如下步骤：采用p-Si作衬底及栅电极；在硅衬底上通过热氧化法生成的二氧化硅作为栅极绝缘层；在真空沉积有源层薄膜之前，将衬底切割成合适大小并加以清洗，溅射靶材为ZnO-LiO混合物，在薄膜沉积之前，先将沉积室抽真空，再通入工作气体氩气Ar，开始起辉溅射，通过改变溅射时间来调控有源层ZnO：Li薄膜的厚度，得到ZnO：Li薄膜，本发明所述制备方法工艺简单，易于操作。