Low-power anti-radiation transistor chip and preparation method thereof

The invention discloses a low-power anti-radiation transistor chip and a preparation method thereof. The low-power anti-radiation transistor chip is composed of a base region, an emitter region, an emitter region bonding point and a base region bonding point. The contour of the base region is in a g...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HAN YIRONG, GUO YINGHUA, TIAN XINHAO, ZHAO ZHIHUAN, AN ZHAOWEI, WANG CHUANCHAO, ZHANG LI, LU KAIGE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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