Low-power anti-radiation transistor chip and preparation method thereof

The invention discloses a low-power anti-radiation transistor chip and a preparation method thereof. The low-power anti-radiation transistor chip is composed of a base region, an emitter region, an emitter region bonding point and a base region bonding point. The contour of the base region is in a g...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	HAN YIRONG, GUO YINGHUA, TIAN XINHAO, ZHAO ZHIHUAN, AN ZHAOWEI, WANG CHUANCHAO, ZHANG LI, LU KAIGE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The invention discloses a low-power anti-radiation transistor chip and a preparation method thereof. The low-power anti-radiation transistor chip is composed of a base region, an emitter region, an emitter region bonding point and a base region bonding point. The contour of the base region is in a gourd shape. The contour of one end of the base region is a large arc. The contour of the other end of the base region is a small arc. The radius of the large arc is larger than the radius of the small arc. The surface of the base region in the area of the large arc is provided with the emitter region and the emitter region bonding point successively from bottom to top. The surface of the base region in the area of the small arc is provided with the base region bonding point. The emitter region,the emitter region bonding point and the base region bonding point are all located on the same side surface of the base region. The other side surface of the base region is in contact with a substrate. The contours of the emi