Method of manufacturing semiconductor device

The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns inclu...

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Bibliographische Detailangaben
Hauptverfasser: JUNG MYOUNG SHIM, WON JOON CHOI, JONG GI KIM, MIN SUNG KO, KYEONG BAE KIM, YOUNG HO YANG, KWANG WOOK LEE, HYENG WOO EOM, DONG SUN SHEEN, WOO JAE CHUNG
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product. 制造半导体器件的方法包括以下步骤:在层间绝缘层之间的层间空间中形成导电图案,所述导电图案通过穿过所述层间绝缘层的狭缝彼此分离,其中,所述导电图案包含第副产物;通过使残留在所述导电图案中的第副产物与源气体反应来产生气相的第二副产物;以及执行排气工艺以去除所述第二副产物。