OVERVOLTAGE PROTECTION COMPONENT

An integrated circuit includes a vertical Shockley diode and a first vertical transistor. The diode is formed by, from top to bottom of a semiconductor substrate, a first region of a first conductivity type, a substrate of a second conductivity type, and a second region of the first conductivity type having a third region of the second conductivity type formed therein. The vertical transistor is formed by, also from top to bottom, a portion of the second region and a fourth region of the second conductivity type. The third and fourth regions are electrically connected to each other. 种集成电路，包括垂直肖克利二极管和第垂直晶体管。二极管从半导体衬底的顶部至底部由第导电类型的第区域、第二导电类型的衬底、以及具有形成在其中第二导电类型的第三区域的、第导电类型的第二区域而形成。垂直晶体管也从顶部至底部由第二区域的部分、以及第二导电类型的第四区域形成。第三和第四区域相互电连接。