ARC-RESISTANT CRACKSTOP

The invention relates to arc-resistant crackstop. The present disclosure relates to semiconductor structures and, more particularly, to arc resistant crackstop structures and methods of manufacture. The structure includes: a crackstop structure comprising dual rails surrounding an active area of an integrated circuit; and a through-BOx electrical contact electrically connecting each of the dual rails to an underlying substrate. 本发明涉及耐电弧的开裂阻止。本公开涉及半导体结构，更特别地，涉及耐电弧的开裂阻止结构及其制造方法。该结构包括：开裂阻止结构，其包括围绕集成电路的有源区域的双轨道；以及BOx穿通电接触，其将双轨道中的每个电连接到下层衬底。