INTERGRATED CIRCUIT STRUCTURE
An integrated circuit structure includes an active area, a first top metal pattern, a second top metal pattern, a stack of first metal patterns, a stack of second metal patterns, a first transistor and a second transistor The active area is formed on a substrate The first top metal pattern electrica...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | An integrated circuit structure includes an active area, a first top metal pattern, a second top metal pattern, a stack of first metal patterns, a stack of second metal patterns, a first transistor and a second transistor The active area is formed on a substrate The first top metal pattern electrically connects to the active region. The second top metal pattern electrically connects to the activeregion, and formed on the same metal layer as the first top metal pattern. The stack of first metal patterns includes M layers of first metal patterns. The stack of second metal patterns includes M layers of second metal patterns. The first transistor is formed on the substrate and electrically connects to the active area through the stack of first metal patterns which is eclectically connected tothe first top metal pattern The second transistor is disposed nearby the first transistor and electrically connects to the active area through the stack of second metal patterns which is eclecticallyconnected to the second to |
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